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PD - 94966 IRF1010NPBF HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l D VDSS = 55V RDS(on) = 11m G S ID = 85A Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.50 --- Max. 0.85 --- 62 Units C/W www.irf.com 1 02/02/04 IRF1010NPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 55 --- --- 2.0 32 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 11 m VGS = 10V, ID = 43A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 43A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 120 ID = 43A 19 nC VDS = 44V 41 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 43A ns --- RG = 3.6 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 3210 --- VGS = 0V 690 --- VDS = 25V 140 --- pF = 1.0MHz, See Fig. 5 1030250 mJ IAS = 4.3A, L = 270H Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 13 76 39 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 85 showing the A G integral reverse --- --- 290 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 69 100 ns TJ = 25C, IF = 43A --- 220 230 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by Starting TJ = 25C, L = 270H max. junction temperature. ( See fig. 11 ) ISD 43A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. RG = 25, IAS = 43A, VGS=10V (See Figure 12) This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. 2 www.irf.com IRF1010NPBF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 4.5V 10 4.5V 10 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 175 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 175 C RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 85A 2.0 1.5 10 1.0 0.5 1 V DS = 25V 20s PULSE WIDTH 4 6 8 10 12 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF1010NPBF 6000 20 5000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd ID = 43A VDS = 44V VDS = 27V VDS = 11V 16 C, Capacitance(pF) 4000 Ciss 12 3000 Coss 2000 8 1000 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 20 40 60 80 100 120 VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 175 C 10 ID, Drain-to-Source Current (A) 100 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100sec 1 TJ = 25 C 10 Tc = 25C Tj = 175C Single Pulse 1 10 1msec 0.1 0.0 V GS = 0 V 0.6 1.2 1.8 2.4 10msec 100 1000 VSD ,Source-to-Drain Voltage (V) 1 VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF1010NPBF 100 LIMITED BY PACKAGE 80 VDS VGS RG RD D.U.T. + ID , Drain Current (A) -VDD 60 V GS Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF1010NPBF 15V EAS , Single Pulse Avalanche Energy (mJ) 500 TOP 400 VDS L DRIVER BOTTOM ID 18A 30A 43A RG VGS 20V D.U.T IAS tp + V - DD 300 A 0.01 200 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF1010NPBF Peak Diode Recovery dv/dt Test Circuit D.U.T* + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG VGS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt [VDD] Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRF1010NPBF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y LINE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. This product has been designed and qualified for the automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/04 8 www.irf.com |
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